ARMONK (dpa-AFX) - Toppan Photomask said that it has reached a joint
research and development agreement with IBM related to the 2 nanometer or nm
logic semiconductor node, using extreme ultraviolet (EUV) lithography. The
agreement also includes High-NA EUV photomask development capability on
next-generation semiconductors.

Under the agreement, IBM and Toppan Photomask intend to collaborate over a
five-year period, commencing in the first quarter 2024, to enhance photomask
capability at the Albany NanoTech Complex in Albany, NY, USA, and Toppan
Photomask's Asaka Plant in Niiza, Japan.



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