16.07.2024 07:30:35 - dpa-AFX: EQS-News: Nexperia partners with AIXTRON for 200mm SiC and GaN power (english)

Nexperia partners with AIXTRON for 200mm SiC and GaN power

EQS-Media / 16.07.2024 / 07:30 CET/CEST

Herzogenrath, July 16, 2024 - AIXTRON SE (FSE: AIXA) supports Nexperia B.V.
in the ramp-up of its 200mm volume production for silicon carbide (SiC) and
gallium nitride (GaN) power devices. With the new G10-SiC for the 200mm SiC
volume ramp, Nexperia is placing a repeat order for AIXTRON SiC tools. This
is complemented by an order for AIXTRON G10-GaN tools.

Both GaN and SiC epitaxial films are essential for the design of
next-generation energy-efficient Field-Effect (FET) or Metal-Oxide-Field
Effect (MOSFET) transistors to be used in various power conversion
applications ranging from data centers and solar inverters in electric
vehicles (EV) or trains.

Nexperia has decades of experience in the development of power devices,
achieving more than 2.1 billion USD in revenue in 2023. After releasing its
first GaN FET device in 2019 and its first SiC MOSFET in 2023, Nexperia
continues to expand its portfolio with new high-reliability and
power-efficient devices.

Nexperia, headquartered in Nijmegen (Netherlands), operates front-end
factories in Hamburg (Germany) and Greater Manchester (England). The AIXTRON
epitaxy systems will be installed at Nexperia's wafer fab in Hamburg
(Germany), further strengthening the semiconductor production capabilities
in the region. Nexperia's Hamburg site produces approximately 100 billion
discrete semiconductors annually, accounting for about a quarter of the
global production of this type of products.

'We are honored to strengthen our alliance with Nexperia, a pivotal player
in the semiconductor landscape. Our G10 epitaxy solutions are at the heart
of this collaboration, bolstering Nexperia's growth strategies and enabling
the high-volume production of wide bandgap semiconductors for commercial
applications. Together, we are setting the pace for the industry's
transition to more energy-efficient SiC and GaN solutions', said Dr. Felix
Grawert, CEO and President of AIXTRON SE.

'As we advance our technological capabilities and market presence in
high-power semiconductor production, our strategic partnership with AIXTRON
is transformative. Integrating the G10 systems will significantly enhance
our wide bandgap technology development and production capabilities. We
build on AIXTRON's proven uniformity and leverage the additional
productivity gains of AIXTRON's G10 tools to scale up our production
efficiently and cost-effectively. With the new G10 tools in our Hamburg
facility, we are poised for further advancements in our production
capabilities,' said Achim Kempe, COO at Nexperia B.V.

Contact

Media:

Ragah Dorenkamp
Director Corporate Communications
fon +49 (2407) 9030-1830
e-mail r.dorenkamp@aixtron.com

Investors:

Christian Ludwig
Vice President Investor Relations
fon +49 (2407) 9030-444
e-mail c.ludwig@aixtron.com

About AIXTRON

AIXTRON SE is a leading provider of deposition equipment to the
semiconductor industry. The Company was founded in 1983 and is headquartered
in Herzogenrath (near Aachen), Germany, with subsidiaries and sales offices
in Asia, United States, and in Europe. AIXTRON´s technology solutions are
used by a diverse range of customers worldwide to build advanced components
for electronic and optoelectronic applications based on compound or organic
semiconductor materials. Such components are used in a broad range of
innovative applications, technologies and industries. These include Laser
and LED applications, display technologies, data transmission, SiC and GaN
power management and conversion, communication, signaling and lighting as
well as a range of other leading-edge applications.

Our registered trademarks: AIXACT®, AIXTRON®, Atomic Level SolutionS®, Close
Coupled Showerhead®, CRIUS®, Gas Foil Rotation®, OVPD®, Planetary Reactor®,
PVPD®, TriJet®

For further information on AIXTRON (FSE: AIXA, ISIN DE000A0WMPJ6) please
visit our website at: www.aixtron.com

Forward-Looking Statements

This document may contain forward-looking statements regarding the business,
results of operations, financial condition and earnings outlook of AIXTRON.
These statements may be identified by words such as 'may', 'will', 'expect',
'anticipate', 'contemplate', 'intend', 'plan', 'believe', 'continue' and
'estimate' and variations of such words or similar expressions. These
forward-looking statements are based on our current assessments,
expectations and assumptions, of which many are beyond control of AIXTRON,
and are subject to risks and uncertainties. You should not place undue
reliance on these forward-looking statements. Should these risks or
uncertainties materialize or should underlying expectations not occur or
assumptions prove incorrect, actual results, performance or achievements of
AIXTRON may materially vary from those described explicitly or implicitly in
the relevant forward-looking statement. This could result from a variety of
factors, such as actual customer orders received by AIXTRON, the level of
demand for deposition technology in the market, the timing of final
acceptance of products by customers, the condition of financial markets and
access to financing for AIXTRON, general conditions in the market for
deposition plants and macroeconomic conditions, cancellations, rescheduling
or delays in product shipments, production capacity constraints, extended
sales and qualification cycles, difficulties in the production process, the
general development in the semi-conductor industry, increased competition,
fluctuations in exchange rates, availability of public funding, fluctuations
and/or changes in interest rates, delays in developing and marketing new
products, a deterioration of the general economic situation and any other
factors discussed in any reports or other announcements , in particular in
the chapter Risks in the Annual Report, filed by AIXTRON. Any
forward-looking statements contained in this document are based on current
expectations and projections of the executive board based on information
available the date hereof. AIXTRON undertakes no obligation to revise or
update any forward-looking statements as a result of new information, future
events or otherwise, unless expressly required to do so by law.

This document is also available in a German language translation version. In
case of discrepancies, the English language document shall prevail and shall
be the valid version.


End of Media Release

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Issuer: AIXTRON SE
Key word(s): Enterprise

16.07.2024 CET/CEST Dissemination of a Press Release, transmitted by EQS
News - a service of EQS Group AG.
The issuer is solely responsible for the content of this announcement.

The EQS Distribution Services include Regulatory Announcements,
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Archive at www.eqs-news.com

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   Language:       English
   Company:        AIXTRON SE
                   Dornkaulstraße 2
                   52134 Herzogenrath
                   Germany
   Phone:          +49 (2407) 9030-0
   Fax:            +49 (2407) 9030-445
   E-mail:         invest@aixtron.com
   Internet:       www.aixtron.com
   ISIN:           DE000A0WMPJ6
   WKN:            A0WMPJ
   Indices:        MDAX, TecDAX
   Listed:         Regulated Market in Frankfurt (Prime Standard);
                   Regulated Unofficial Market in Berlin, Dusseldorf,
                   Hamburg, Hanover, Munich, Stuttgart, Tradegate
                   Exchange; Nasdaq OTC
   EQS News ID:    1946691




End of News EQS Media
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1946691 16.07.2024 CET/CEST
Name WKN Börse Kurs Datum/Zeit Diff. Diff. % Geld Brief Erster Schluss
AIXTRON SE NA O.N. A0WMPJ Xetra 17,150 23.08.24 10:40:13 -0,365 -2,08% 17,145 17,160 17,310 17,515

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